Product Overview
SiPlex™ adopts a "Design-For-SiP" collaborative design flow, compressing traditional board-level systems into a 10 mm × 10 mm package. Core technologies include:
• Ultra-high density RDL (2 µm L/S) with micro bumps at 30 µm pitch;
• 2.5D silicon interposer / 3D TSV vertical interconnects;
• Multi-zone co-fired substrate (ABF+BT hybrid) ensuring 260 °C lead-free reflow;
• Built-in EMI shielding and antenna integration, supporting millimeter-wave AiP;
• Comprehensive signal integrity, power integrity, and thermo-mechanical co-simulation platform.
Product Applications
• 5G/6G smartphone RF front-end modules (FEMiD, PAMiD)
• AR/VR all-in-one sensor-compute-memory fusion SiP
• Automotive high-reliability domain controllers (ASIL-D)
• Ultra-low-power SiP for medical implantable neurostimulators
Technical Features
Heterogeneous Compatibility: Supports logic (5 nm), RF (28 nm), memory (LPDDR5/6), MEMS, and optical sensing bare die co-integration.
Extreme Miniaturization: Package density ≥ 1000 I/O/mm², system volume reduced by 70%, interconnect loss < 0.2 dB/mm @28 GHz.
High Reliability: Compliant with AEC-Q100 Grade 1, MIL-STD-883 mechanical shock, and 1000 h high-temperature/humidity validation; MTTF > 10 kh at 150 °C junction temperature.